CMT seminar: Electron Beam Tuning of Transport in Carbon Nanodevices
Monday, June 6, 2011 – 3:15pm – 4:30pm
University of Virginia
Electron-beam lithography (EBL) is widely used in the fabrication of next-generation transistors based on low-dimensional nanomaterials such as carbon nanotubes, nanowires, and graphene. My group recently discovered that low energy electron-beam dosage can induce high amplitude random telegraph signal (RTS) in nanotube-channel field effect transistors, in addition to other effects; see Phys. Rev. B 80, 033402 (2009). We are currently examining the role of charge trapping at the oxide/channel interface, substrate backscattering, and other mechanisms that may be responsible for these effects and may contribute to 1/f noise. In parallel, my group is also exploring EBL-dosage effects in devices based on epitaxial graphene. I will present our most recent findings and discuss their importance for future nanofabrication strategies.
Host: Jim Freericks