Oxide Interface: a chance for new electronics

Tuesday, September 11, 2012 - 3:15pm - 4:15pm
Regents 109
Lu Li
Department of Physics, University of Michigan

Like silicon in computer chips, interfaces between complex oxides are potential candidates for new functional electronics. Some interfaces between insulating oxides are conductive, and even superconducting. Transistors based on these interfaces demonstrate that electrons can be more effectively controlled with applied voltages, which provides a new way to make low dissipation electronics. Moreover, magnetic moments of electrons spontaneously align even when electrons become superconducting. These novel fundamental properties suggest potential electron systems for future devices.

Host: Jim Freericks
Discussion Leader: Jim Freericks