Landmark MoS2 Research Published in Nature – Scientific Reports

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Semiconducting molybdenum disulfphide is an attractive material for novel nanoscale optoelectronic devices primarily due to its inherently large direct bandgap. However, a major technological hurdle has been the inability to create solid-state hole transport in MoS2 transistors. A recent breakthrough achieved by members of the Physics Department will
appear in Nature – Scientific Reports, entitled “Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions”. The author list includes a diverse group – a visiting engineering professor from Brazil (M. Fontana), a physics undergraduate (T. Deppe) and graduate (T. Boyd) student, a post-doctoral fellow (M. Rinzan), a computational theorist (A. Liu), and two condensed matter experimentalists (M. Paranjape and P. Barbara).